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insulated gate bipolar transistor with ultrafast soft recovery diode features 10/14/02 ? low vce (on) non punch through igbt technology. low diode vf. 10s short circuit capability. square rbsoa. ultrasoft diode reverse recovery characteristics. positive vce (on) temperature coefficient. to-247ad package. benefits benchmark efficiency for motor control. rugged transient performance. low emi. excellent current sharing in parallel operation. IRGP8B120KD-E e g n-channel c v ces = 1200v i c = 10a, t c =100c t sc > 10s, t j =150c v ce(on) typ. = 2.25v www.irf.com 1 to-247ad absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 20 i c @ t c = 100c continuous collector current 10 a i cm pulse collector current 40 i lm clamped inductive load current 40 i f @ t c = 25c diode continuous forward current 20 i f @ t c = 100c diode continuous forward current 10 i fm diode maximum forward current 40 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 135 w p d @ t c = 100c maximum power dissipation 54 t j operating junction and -55 to +150 t stg storage temperature range c storage temperature range, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1nm) thermal and mechanical characteristics parameter min. typ. max. units r jc junction-to-case- igbt ??? ??? 0.92 r jc junction-to-case- diode ??? ??? 1.58 c/w r cs case-to-sink, flat, greased surface ??? 0.24 ??? r ja junction-to-ambient, typical socket mount ??? ??? 40 wt weight ??? 6 (0.21) ??? g (oz.)

IRGP8B120KD-E 2 www.irf.com switching characteristics @ tj = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig . qg total gate charge (turn-on) ??? 50 75 i c = 8.0a 23 qge gate - emitter charge (turn-on) ??? 6.0 8.0 nc v cc = 800v ct 1 qgc gate - collector charge (turn-on) ??? 25 38 v ge = 15v e on turn-on switching loss ??? 325 450 i c = 8.0a, v cc = 600v ct 4 e off turn-off switching loss ??? 525 700 j v ge = 15v,r g = 22 ? , l =1.0mh e tot total switching loss ??? 850 1150 ls = 150nh t j = 25c t d(on) turn-on delay time ??? 30 39 i c = 8.0a, v cc = 600v ct 4 tr rise time ??? 15 21 ns v ge = 15v, r g = 22 ? l =1.0mh t d ( off ) turn-off delay time ??? 165 180 ls = 150nh, t j = 25c t f fall time ??? 33 43 e on turn-on switching loss ??? 525 675 i c = 8.0a, v cc = 600v ct 4 e off turn-off switching loss ??? 725 975 j v ge = 15v,r g = 22 ? , l =1.0mh 1 3,15 e tot total switching loss ??? 1250 1650 ls = 150nh t j = 125c wf 1 wf 2 t d ( on ) turn-on delay time ??? 30 39 i c = 8.0a, v cc = 600v 1 4, 1 6 t r rise time ??? 15 21 ns v ge = 15v, r g = 22 ? l =1.0mh ct 4 t d ( off ) turn-off delay time ??? 195 210 ls = 150nh, t j = 125c wf 1 t f fall time ??? 42 55 wf 2 c ies input capacitance ??? 690 ??? v ge = 0v c oes output capacitance ??? 45 ??? pf v cc = 30v 22 c res reverse transfer capacitance ??? 22 ??? f = 1.0mhz rbsoa reverse bias safe operting area full square t j = 150c, i c = 40a, vp =1200v 4 v cc = 900v, v ge = +15v to 0v,r g = 22 ? ct 2 scsoa short circuit safe operting area 10 ??? ??? s t j = 150c, vp =1200v, r g = 22 ? ct 3 v cc = 900v, v ge = +15v to 0v wf 4 erec reverse recovery energy of the diode ??? 650 875 j t j = 125c 1 7,18,1 9 t rr diode reverse recovery time ??? 95 112 ns v cc = 600v, i f = 8.0a, l = 1.0mh 20, 21 i rr diode peak reverse recovery current ??? 16 20 a v ge = 15v,r g = 22 ? , ls = 150nh ct 4,wf 3 electrical characteristics @ tj = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref. fig . v ( br ) ces collector-to-emitter breakdown voltage 1200 ??? ??? v v ge = 0v, i c = 500a ? v ( br ) ces / ? t j temperature coeff. of breakdown voltage ??? 1.15 ??? v/c v ge = 0v, i c = 1.0ma, (25c-125c) v ce ( on ) collector-to-emitter saturation voltage ??? 2.25 2.45 v i c = 8.0a, v ge = 15v 5,6,7 ??? 2.65 2.85 i c = 8.0a,v ge = 15v, t j = 125c 9,10,11 v ge ( th ) gate threshold voltage 4.0 5.0 6.0 v v ce = v ge , i c = 250a 9,10,11 ? v ge ( th ) /? t j temperature coeff. of threshold voltage ??? -11 ??? mv/c v ce = v ge , i c = 1.0ma, (25c-125c) 12 gfe forward transconductance ??? 5.2 ??? s v ce = 50v, i c = 8.0a, pw=80s i ces zero gate voltage collector current ??? 5.0 100 a v ge = 0v, v ce = 1200v ??? 125 300 v ge = 0v, v ce = 1200v, t j = 125c v fm diode forward voltage drop ??? 1.85 2.10 v i f = 8.0a 8 ??? 1.95 2.20 i f = 8.0a t j = 125c i ges gate-to-emitter leakage current ??? ??? 100 na v ge = 20v v cc = 80% (v ces ), v ge = 15v, l = 100h, r g = 50 ?. energy losses include "tail" and diode reverse recovery.
IRGP8B120KD-E www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c; t j 150c fig. 4 - reverse bias soa t j = 150c; v ge =15v 10 100 1000 10000 v ce (v) 0 1 10 100 i c a ) 0 20 40 60 80 100 120 140 160 t c (c) 0 5 10 15 20 25 i c ( a ) 0 20 40 60 80 100 120 140 160 t c (c) 0 20 40 60 80 100 120 140 160 p t o t ( w ) 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 i c ( a ) 10 s 100 s 1ms dc
IRGP8B120KD-E 4 www.irf.com fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80s fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80s fig. 8 - typ. diode forward characteristics tp = 80s fig. 7 - typ. igbt output characteristics t j = 125c; tp = 80s 0123456 v ce (v) 0 5 10 15 20 25 30 35 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0123456 v ce (v) 0 5 10 15 20 25 30 35 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0.0 1.0 2.0 3.0 4.0 v f (v) 0 5 10 15 20 25 30 35 i f ( a ) -40c 25c 125c 0123456 v ce (v) 0 5 10 15 20 25 30 35 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v
IRGP8B120KD-E www.irf.com 5 fig. 10 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = -40c fig. 11 - typical v ce vs. v ge t j = 125c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10s 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 4.0a i ce = 8.0a i ce = 16a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 4.0a i ce = 8.0a i ce = 16a 0 5 10 15 20 v ge (v) 0 10 20 30 40 50 60 70 80 i c e ( a ) t j = 125c t j = 25c t j = 125c t j = 25c 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 4.0a i ce = 8.0a i ce = 16a
IRGP8B120KD-E 6 www.irf.com fig. 14 - typ. switching time vs. i c t j = 125c; l=1.0mh; v ce = 600v r g = 22 ? ; v ge = 15v fig. 13 - typ. energy loss vs. i c t j = 125c; l=1.0mh; v ce = 600v r g = 22 ? ; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 125c; l=1.0mh; v ce = 600v i ce = 8.0a; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 125c; l=1.0mh; v ce = 600v i ce = 8.0a; v ge = 15v 0 20 40 60 80 100 120 r g ( ? ) 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 e n e r g y ( j ) e on e off 0 5 10 15 20 i c (a) 0 200 400 600 800 1000 1200 1400 e n e r g y ( j ) e off e on 0 5 10 15 20 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 120 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on
IRGP8B120KD-E www.irf.com 7 fig. 17 - typical diode i rr vs. i f t j = 125c fig. 18 - typical diode i rr vs. r g t j = 125c; i f = 8.0a fig. 20 - typical diode q rr v cc = 600v; v ge = 15v;t j = 125c fig. 19 - typical diode i rr vs. di f /dt v cc = 600v; v ge = 15v; i f = 8.0a; t j = 125c 0 50 100 150 r g ( ?) 0 5 10 15 20 25 i r r ( a ) 0 5 10 15 20 i f (a) 0 5 10 15 20 25 i r r ( a ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ? 0 1 2 3 4 di f /dt (a/s) 0 5 10 15 20 25 i r r ( a ) 0 200 400 600 800 1000 di f /dt (a/s) 0 500 1000 1500 2000 2500 q r r ( n c ) 10? 22? 100 ? 47? 8.0a 16a 4.0a
IRGP8B120KD-E 8 www.irf.com fig. 21 - typical diode e rr vs. i f t j = 125c fig. 23 - typical gate charge vs. v ge i ce = 8.0a; l = 600h fig. 22 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 20 40 60 80 100 v ce (v) 1 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres 0 204060 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 600v 800v 0 5 10 15 20 i f (a) 0 100 200 300 400 500 600 700 800 900 1000 e n e r g y ( j ) 22? 10? 47 ? 100 ?
IRGP8B120KD-E www.irf.com 9 fig 25. maximum transient thermal impedance, junction-to-case (diode) fig 24. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.620 0.00105 0.295 0.02066 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci i / ri ci= i / ri 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 1.011 0.001115 0.572 0.024151 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci i / ri ci= i / ri
IRGP8B120KD-E 10 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit 1k vcc du t 0 l l rg 80 v dut 1000v d c driver dut 900v l rg vcc diode clamp / dut dut / dr iv er - 5v rg vcc dut r = v cc i cm
IRGP8B120KD-E www.irf.com 11 fig. wf1- typ. turn-off loss waveform @ t j = 125c using fig. ct.4 fig. wf2- typ. turn-on loss waveform @ t j = 125c using fig. ct.4 fig. wf3- typ. diode recovery waveform @ t j = 125c using fig. ct.4 fig. wf4- typ. s.c waveform @ t c = 150c using fig. ct.3 -100 0 100 200 300 400 500 600 700 -0.10 0.05 0.20 time (s) v ce (v) -5 0 5 10 15 20 25 30 35 i ce (a ) 90% test c urrent 5% v ce 10% test c urrent tr eon loss -100 0 100 200 300 400 500 600 700 800 -0.50 0.50 1.50 2.50 time(s) v ce (v) -2 0 2 4 6 8 10 12 14 16 i ce (a) 90% i ce 5% v ce eoff loss tf 10% i ce -700 -600 -500 -400 -300 -200 -100 0 100 -0.10 0.10 0.30 0.50 0.70 time (s) v f (v) -25 -20 -15 -10 -5 0 5 10 15 i f (a) pe a k i rr t rr q rr 10% peak irr 0 100 200 300 400 500 600 700 800 900 1000 -5.00 0.00 5.00 10.00 15.00 time (s) v ce (v ) 0 10 20 30 40 50 60 70 80 90 100 i ce (a) v ce i ce
IRGP8B120KD-E 12 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/02 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site. to-247 package is not recommended for surface mount application. to-247ad case outline and dimensions

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